Determination of the density of localized states in fluorinateda‐Si using deep level transient spectroscopy

摘要: The density of localized states distribution in fluorinated a‐Si (a‐Si:F:H) was investigated using a digital deep level transient spectroscopy (DLTS) system. DLTS spectra indicate minimum the about 1015 cm−3 eV−1, which is comparable to value previously reported for a‐Si:H DLTS. Since field‐effect measurements show that much lower a‐Si:F:H than a‐Si:H, we can conclude surface smaller a‐Si:H. This has important consequences potential applications amorphous silicon‐based films.