Staebler-wronski effect: A solution

作者: K.K. Sharma

DOI: 10.1016/0741-983X(88)90056-2

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摘要: Abstract A scanning of various elements the periodic table has been made keeping in view their atomic sizes, electron affinities and ionization energies. The halogens belonging to group vii have suggested as most effective be incorporated a-Si:H films contain photoinduced degradation problems them.

参考文章(8)
E.S. Sabisky, Status of research on the light-induced effect in a-Si materials and a-Si solar cells Journal of Non-crystalline Solids. ,vol. 87, pp. 43- 63 ,(1986) , 10.1016/S0022-3093(86)80066-7
D. L. Staebler, C. R. Wronski, Reversible conductivity changes in discharge‐produced amorphous Si Applied Physics Letters. ,vol. 31, pp. 292- 294 ,(1977) , 10.1063/1.89674
Stanford R. Ovshinsky, Arun Madan, A new amorphous silicon-based alloy for electronic applications Nature. ,vol. 276, pp. 482- 484 ,(1978) , 10.1007/978-1-4684-8745-9_15
D. L. Staebler, C. R. Wronski, Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon Journal of Applied Physics. ,vol. 51, pp. 3262- 3268 ,(1980) , 10.1063/1.328084
C. H. Hyun, M. S. Shur, A. Madan, Determination of the density of localized states in fluorinateda‐Si using deep level transient spectroscopy Applied Physics Letters. ,vol. 41, pp. 178- 180 ,(1982) , 10.1063/1.93453
S. Tsuda, N. Nakamura, K. Watanabe, T. Takahama, H. Nishiwaki, M. Ohnishi, Y. Kuwano, Light-induced instability of amorphous silicon photovoltaic cells Solar Cells. ,vol. 9, pp. 25- 36 ,(1983) , 10.1016/0379-6787(83)90073-X