On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography
作者： James R. Riley , Theeradetch Detchprohm , Christian Wetzel , Lincoln J. Lauhon
DOI: 10.1063/1.4871510
关键词:
摘要: Surface crystallography and polarity are shown to influence the detection probability of In, Ga, N ions during atom probe tomography analysis InxGa1−xN m-plane, c-plane, (202¯1¯) quantum wells. A deficit is observed in regions reconstruction generated from Ga-polar surfaces, detecting group-III atoms lower wells than GaN barrier layers. Despite these artifacts, detected In mole fraction consistent throughout a given well regardless crystal orientation or evaporation surface which was generated.
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