Hybrid Anodic and Metal-Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

摘要: Silicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, chemical robustness SiC makes it very difficult to process, and only limited methods are available fabricate nanostructures on SiC. In this work, a hybrid anodic metal-assisted etching (MACE) method proposed nanowires based wet approaches at room temperature under atmospheric pressure. Through investigations mechanism optimal conditions, found that metal component plays least two key roles in i.e., acting as catalyst produce hole carriers introducing band bending accumulate sufficient holes for etching. combined MACE process required electrical bias greatly lowered (3.5 V 7.5 creating nanowires) while enhancing efficiency. Furthermore, demonstrated by tuning time, various can be obtained diameters pores range from tens hundreds nanometers. This facile may provide feasible economical way broad applications.