Synthesis of SiC Nanowires via Controllable Anodic Etching Time

作者: Khaled M. Chahrour , M. R. Hashim

DOI: 10.1007/S00339-020-03677-1

关键词:

摘要: Porous SiC (PSC) was successfully synthesized via UV-assisted pulsed current anodic etching of hexagonal n-type silicon carbide (6H–SiC) substrate using different times. The micromorphological and structural characterizations PSC were reported. Field-emission scanning electron microscopy (FESEM) results established that the time can be considered as a significant parameter controls micromorphology aspects porous specimens. Furthermore, adjustment convert pores into nanowire structures. Raman spectroscopy characterization performed well, where shape spectra analyzed, in precise transverse optical E1 (TO) longitudinal A1 (LO) peaks, which correlate powerfully with micromorphology. This simplistic synthesis may potential affordable technique to synthesize nanowires for extensive applications.

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