Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging

摘要: Silicon fusion and eutectic bonding processes based on the technique of localized heating have been successfully demonstrated. Phosphorus-doped polysilicon gold films are applied separately in silicon-to-glass silicon-to-gold experiments. These patterned as line-shape resistive heaters with widths 5 or 7 /spl mu/m for purpose bonding. In experiments, silicon to achieved at temperatures above 1000/spl deg/C 800/spl deg/C, respectively, by applying 1-MPa contact pressure. Both can achieve strength comparable fracture toughness bulk less than min. Without using global furnaces, process is conducted common environment room temperature atmospheric Although these accomplished within a confined region under high temperature, substrate remains low. This new class scheme has potential applications microelectromechanical systems fabrication packaging that require low-temperature processing wafer level, excellent strength, hermetic sealing characteristics.