Electronic device comprising RF-LDMOS transistor having improved ruggedness

摘要: The invention relates to an electronic device comprising RF-LDMOS transistor (1) and a protection circuit (2) for the transistor. comprises: i) input terminal (Ni) coupled drain (Drn) of (1); ii) clipping node (Nc); iii) (3) (Nc) substantially keeping voltage on below predefined reference voltage, wherein is designed be larger than operation lower trigger parasitic bipolar (100) that inherently present in transistor; iv) capacitance (Ct) between further (Gnd), v) rectifying element (D1, D2) connected with its anode cathode (Nc). provides having improved RF ruggedness, while not, or at least much lesser extent, compromising performance