Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
作者： Pierre Morin , John Hongguang Zhang
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摘要: A static induction transistor is formed on a silicon carbide substrate doped with first conductivity type. First recessed regions in top surface of the are filled epitaxially grown gate situ second Epitaxially channel type positioned between adjacent epitaxial regions. source The bottom includes vertically aligned and silicided to support formation drain contact. surfaces lead electrically coupled regions,
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