SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME
作者： Junghee Park , Youngkyun Jung , Dae Hwan Chun , Jongseok Lee
DOI:
关键词: Schottky diode 、 Substrate (electronics) 、 Layer (electronics) 、 Electrode 、 Materials science 、 Epitaxy 、 Silicon carbide 、 Ohmic contact 、 Optoelectronics
摘要: A Schottky barrier diode includes: an n+ type of silicon carbide substrate; n-type epitaxial layer formed on a first surface the plurality p+ regions inside layer; electrode in upper portion region; and ohmic second substrate, wherein are to be spaced apart from each other at predetermined interval within layer.
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