Random telegraph noise in 2D hexagonal boron nitride dielectric films
作者： A. Ranjan , F. M. Puglisi , N. Raghavan , S. J. O'Shea , K. Shubhakar
DOI: 10.1063/1.5022040
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摘要: This study reports the observation of low frequency random telegraph noise (RTN) in a 2D layered hexagonal boron nitride dielectric film pre- and post-soft breakdown phases using conductive atomic force microscopy as nanoscale spectroscopy tool. The RTN traces virgin electrically stressed (after percolation breakdown) were compared, signal features statistically analyzed Factorial Hidden Markov Model technique. We observe combination both two-level multi-level signals h-BN, akin to trends commonly observed for bulk oxides such SiO2 HfO2. Experimental evidence suggests frequent occurrence unstable anomalous dielectrics which makes extraction defect energetics challenging.
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