摘要: ABSTRACT A new theory of U-process relaxation, along with the acoustic phonon Boltzmann equation, is applied to thermal conductivity SiO2. Relaxation due dislocations and contribution optical modes are explored heuristically. The results compare favorably experiment from 1 - 500°K using Gruneisen gammas, threshold constant, boundary scattering length as adjustable parameters, possible adjustment Debye temperature reflect variable participation modes.
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