作者: R. P. Cardoso , G. Arnoult , Thierry Belmonte , G. Henrion , Sylvian Weber
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摘要: High temperature titanium nitriding is achieved by plasmas sustained at atmospheric pressure in a microwave resonant cavity. TiN layers produced the range (1 475–1 980 K) present grain orientation that mainly defined initial of substrate. Coarsening pretreatments on samples before allows synthesis strongly oriented layer. The TiN + α-Ti layer thickness reaches about 116 µm after 1 h treatment 1 760 K. For these times, bulk material not totally transformed into TiN, but this first step towards single crystals from commercial-grade pure titanium.