Titanium Nitriding by Microwave Atmospheric Pressure Plasma: Towards Single Crystal Synthesis

作者: R. P. Cardoso , G. Arnoult , Thierry Belmonte , G. Henrion , Sylvian Weber

DOI: 10.1002/PPAP.200930704

关键词:

摘要: High temperature titanium nitriding is achieved by plasmas sustained at atmospheric pressure in a microwave resonant cavity. TiN layers produced the range (1 475–1 980 K) present grain orientation that mainly defined initial of substrate. Coarsening pretreatments on samples before allows synthesis strongly oriented layer. The TiN + α-Ti layer thickness reaches about 116 µm after 1 h treatment 1 760 K. For these times, bulk material not totally transformed into TiN, but this first step towards single crystals from commercial-grade pure titanium.

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