A facile approach for preparing chromium nitride thin films via atmospheric pressure plasma processing
作者： Hong-Ying Chen , Wei-Hsun Yang
DOI: 10.1016/J.SURFCOAT.2020.125688
关键词: Thin film 、 Analytical chemistry 、 Materials science 、 Nitride 、 Nitrogen 、 Phase (matter) 、 Forming gas 、 Chromium nitride 、 Atmospheric-pressure plasma 、 Diffraction
摘要: Abstract Chromium nitride (CrN) thin films with strong (111, 200) diffraction peaks have been produced using an ammonolysis-free atmospheric pressure plasma process. The sol-gel derived are deposited on quartz that has bombarded plasma, axial N2 (99.995%) at 1100 W or forming gas (N2/H2 = 9) 700 W to 1000 W for 10 min. In addition, dichromium (Cr2N) intense (002, 111) formed made from A dense morphology was observed in the CrN films. comparison, a porous Cr2N films, which can be explained by release of nitrogen during phase transformation. This process, does not require traditional ammonolysis, offers effective route toward chromium
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