Upper limit for the modulation bandwidth of a quantum dot laser

作者: Levon V. Asryan , Robert A. Suris

DOI: 10.1063/1.3446968

关键词:

摘要: We derive a closed-form expression for the upper limit modulation bandwidth of semiconductor quantum dot (QD) laser. The highest possible increases directly with overlap integral electron and hole wave functions in QD, number QD-layers, surface density QDs layer, is inversely proportional to inhomogeneous line broadening caused by QD-size dispersion. At 10% fluctuations 100% overlap, single QD-layer laser can be as high 60 GHz.

参考文章(15)
T. Ikegami, Y. Suematsu, Resonance-like characteristics of the direct modulation of a junction laser Proceedings of the IEEE. ,vol. 55, pp. 122- 123 ,(1967) , 10.1109/PROC.1967.5420
I.C. Sandall, P.M. Smowton, C.L. Walker, H.Y. Liu, M. Hopkinson, D.J. Mowbray, Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers IEEE Photonics Technology Letters. ,vol. 18, pp. 965- 967 ,(2006) , 10.1109/LPT.2006.873560
L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, D. Bimberg, Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser Journal of Applied Physics. ,vol. 90, pp. 1666- 1668 ,(2001) , 10.1063/1.1383575
L.V. Asryan, S. Luryi, R.A. Suris, Internal efficiency of semiconductor lasers with a quantum-confined active region IEEE Journal of Quantum Electronics. ,vol. 39, pp. 404- 418 ,(2003) , 10.1109/JQE.2002.808171
S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. N. Ledentsov, The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers Applied Physics Letters. ,vol. 85, pp. 5164- 5166 ,(2004) , 10.1063/1.1829158
N.N. Ledentsov, F. Hopfer, D. Bimberg, High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers Proceedings of the IEEE. ,vol. 95, pp. 1741- 1756 ,(2007) , 10.1109/JPROC.2007.900898
C. Su, V. Lanzisera, Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasers IEEE Journal of Quantum Electronics. ,vol. 22, pp. 1568- 1578 ,(1986) , 10.1109/JQE.1986.1073192
Y. Arakawa, H. Sakaki, Multidimensional quantum well laser and temperature dependence of its threshold current Applied Physics Letters. ,vol. 40, pp. 939- 941 ,(1982) , 10.1063/1.92959
P. G. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, L. F. Lester, Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes Applied Physics Letters. ,vol. 77, pp. 262- 264 ,(2000) , 10.1063/1.126944
L V Asryan, R A Suris, Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser Semiconductor Science and Technology. ,vol. 11, pp. 554- 567 ,(1996) , 10.1088/0268-1242/11/4/017