Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasers
作者： C. Su , V. Lanzisera
关键词:
摘要: The differential gain of 1.3 μm InGaAsP lasers is found to be a strong function of the active layer doping level. Using devices with doping enhanced differential gain and short cavity …
harvard.edu
sci-hub.se 参考文章(37)
D. Tsang, J. Walpole, Q-switched semiconductor diode lasers IEEE Journal of Quantum Electronics. ,vol. 19, pp. 145- 156 ,(1983) , 10.1109/JQE.1983.1071839
Kam Lau, A. Yariv, Ultra-high speed semiconductor lasers IEEE Journal of Quantum Electronics. ,vol. 21, pp. 121- 138 ,(1985) , 10.1109/JQE.1985.1072624
R.S. Tucker, Chinlon Lin, C.A. Burrus, P. Besomi, R.J. Nelson, High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers Electronics Letters. ,vol. 20, pp. 393- 394 ,(1984) , 10.1049/EL:19840272
C. M. Gee, G. D. Thurmond, H. W. Yen, 17‐GHz bandwidth electro‐optic modulator Applied Physics Letters. ,vol. 43, pp. 998- 1000 ,(1983) , 10.1063/1.94211
T. L. Koch, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, L. A. Coldren, R. A. Linke, W. T. Tsang, R. A. Logan, L. F. Johnson, R. F. Kazarinov, R. Yen, D. P. Wilt, 1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers Applied Physics Letters. ,vol. 47, pp. 12- 14 ,(1985) , 10.1063/1.96410
J. E. Bowers, B. R. Hemenway, A. H. Gnauck, T. J. Bridges, E. G. Burkhardt, D. P. Wilt, S. Maynard, High-frequency constricted mesa lasers Applied Physics Letters. ,vol. 47, pp. 78- 80 ,(1985) , 10.1063/1.96258
CB Su, R Olshansky, None, Measurements of threshold carrier density of III‐V semiconductor laser diodes Applied Physics Letters. ,vol. 43, pp. 856- 858 ,(1983) , 10.1063/1.94527
CB Su, R Olshansky, J Manning, W Powazinik, None, Temperature dependence of threshold current in III‐V semiconductor lasers: Experimental prediction and explanation Applied Physics Letters. ,vol. 44, pp. 1030- 1032 ,(1984) , 10.1063/1.94634
R Olshansky, DM Fye, J Manning, CB Su, None, Effect of nonlinear gain on the bandwidth of semiconductor lasers Electronics Letters. ,vol. 21, pp. 721- 722 ,(1985) , 10.1049/EL:19850509
L. Figueroa, C. Slayman, Huan-wun Yen, High-frequency characteristics of GaAlAs injection lasers IEEE Journal of Quantum Electronics. ,vol. 18, pp. 1718- 1727 ,(1982) , 10.1109/JQE.1982.1071403