Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
作者： S. Heinze , A. Krtschil , J. Bläsing , T. Hempel , P. Veit
DOI: 10.1016/J.JCRYSGRO.2007.07.024
关键词:
摘要: We describe the successful homoepitaxial growth of ZnO layers on oxygen-face substrates by metalorganic vapor-phase epitaxy in two-dimensional mode. In detail, we discuss impact oxygen/zinc precursor ratio using N2O and O2 as oxygen precursors, temperature, reactor pressure structural properties surface morphology obtained X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy measurements. Optimizing parameters leads to smooth layers, ending up a mirror-like grown The layer are found be significantly governed substrate properties.
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Jiandong Ye, Shulin Gu, Shunmin Zhu, Tong Chen, Liqun Hu, Feng Qin, Rong Zhang, Yi Shi, Youdou Zheng, THE GROWTH AND ANNEALING OF SINGLE CRYSTALLINE ZNO FILMS BY LOW-PRESSURE MOCVD Journal of Crystal Growth. ,vol. 243, pp. 151- 156 ,(2002) , 10.1016/S0022-0248(02)01474-4
Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, Homoepitaxial Growth of High-Quality Zn-Polar ZnO Films by Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 42, pp. L1002- L1005 ,(2003) , 10.1143/JJAP.42.L1002
Deuk-Kyu Hwang, Kyu-Hyun Bang, Min-Chang Jeong, Jae-Min Myoung, Effects of RF power variation on properties of ZnO thin films and electrical properties of p n homojunction Journal of Crystal Growth. ,vol. 254, pp. 449- 455 ,(2003) , 10.1016/S0022-0248(03)01205-3
T.P. Smith, H. McLean, David J. Smith, R.F. Davis, Homoepitaxial growth of (0 0 0 1)- and (0 0 0 1̄) -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization Journal of Crystal Growth. ,vol. 265, pp. 390- 398 ,(2004) , 10.1016/J.JCRYSGRO.2004.02.096
D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell, Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy Applied Physics Letters. ,vol. 81, pp. 1830- 1832 ,(2002) , 10.1063/1.1504875
Wen-Ching Shih, Mu-Shiang Wu, Growth of ZnO films on GaAs substrates with a SiO2 buffer layer by RF planar magnetron sputtering for surface acoustic wave applications Journal of Crystal Growth. ,vol. 137, pp. 319- 325 ,(1994) , 10.1016/0022-0248(94)90968-7
A. Krost, J. Christen, N. Oleynik, A. Dadgar, S. Deiter, J. Bläsing, A. Krtschil, D. Forster, F. Bertram, A. Diez, Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 85, pp. 1496- 1498 ,(2004) , 10.1063/1.1785871
H.J. Ko, Y.F. Chen, Z. Zhu, T. Hanada, T. Yao, Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE Journal of Crystal Growth. ,vol. 208, pp. 389- 394 ,(2000) , 10.1016/S0022-0248(99)00510-2
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz, M. Grundmann, Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li Applied Physics Letters. ,vol. 83, pp. 1974- 1976 ,(2003) , 10.1063/1.1609251
Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. ,vol. 265, pp. 375- 381 ,(2004) , 10.1016/J.JCRYSGRO.2004.02.021