Homoepitaxial growth of (0 0 0 1)- and (0 0 0 1̄) -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

摘要: Abstract Homoepitaxial ZnO films have been grown via metalorganic vapor-phase epitaxy on O- and Zn-terminated basal-plane-oriented substrates. Maps of on-axis X-ray rocking curves obtained over 2-in-diameter ZnO{0 0 0 1} wafers, diced from boules produced by vapor phase transport, revealed well-defined areas that ranged 1050 arcsec FWHM, indicating the presence tilted domains. This macrostructure was manifested in all homoepitaxial deposited these wafers. The O-terminated surfaces were initially dense. However, they changed to a textured polycrystalline microstructure after ≈100 nm possessed surface roughness 7.3 nm. By contrast, under same conditions fully dense, without texture appeared be monocrystalline with significantly improved 3.4 nm. Cross-sectional transmission electron microscopy wafers high densities edge dislocations stacking faults associated Frank partial dislocations.