Growth and Characterization of Homoepitaxial ZnO Thin Films Grown by CVD
作者： Christian Neumann , Joachim Sann , Stefan Lautenschläger , Frank Bertram , Jürgen Christen
关键词:
摘要: ZnO as a direct wide-band-semiconductor with its band gap of 3.3 eV at room temperature is promising optoelectronic material. The main obstacle in the system lack achieving reproducible p-type conductivity. reasons for this are high residual intrinsic and extrinsic defect concentrations which still not completely understood. Homoepitaxial growth thus minimization defects due to lattice mismatch incorporation substrate species could be solution overcome these problems. Despite availability bulk single crystals reports regarding homoepitaxy quite rare. In paper we report on successful homoepitaxial thin films by chemical vapor deposition (CVD). Atomic force microscopy shows that two-dimensional epitaxial was achieved without any additional buffer layer. With rocking curve full width half maximum (FWHM) 17 arcsec deposited show superior crystalline quality compared substrate. optical has been characterized laterally cathodoluminescence spectrally photoluminescence. Excitonic emissions 4K narrow 110 μeV. A dependence appearance excitonic from polarity can shown attributed different rates defects.
springer.com
sci-hub.se 参考文章(10)
R. Kuhnert, R. Helbig, Vibronic structure of the green photoluminescence due to copper impurities in ZnO Journal of Luminescence. ,vol. 26, pp. 203- 206 ,(1981) , 10.1016/0022-2313(81)90182-4
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, N. Sawaki, Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy Applied Physics Letters. ,vol. 74, pp. 359- 361 ,(1999) , 10.1063/1.123071
F.H. Leiter, H.R. Alves, A. Hofstaetter, D.M. Hofmann, B.K. Meyer, The Oxygen Vacancy as the Origin of a Green Emission in Undoped ZnO Physica Status Solidi B-basic Solid State Physics. ,vol. 226, ,(2001) , 10.1002/1521-3951(200107)226:1<R4::AID-PSSB99994>3.0.CO;2-F
T.P. Smith, H. McLean, David J. Smith, R.F. Davis, Homoepitaxial growth of (0 0 0 1)- and (0 0 0 1̄) -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization Journal of Crystal Growth. ,vol. 265, pp. 390- 398 ,(2004) , 10.1016/J.JCRYSGRO.2004.02.096
A. Zeuner, H. Alves, D.M. Hofmann, B.K. Meyer, A. Hoffmann, G. Kaczmarczyk, M. Heuken, A. Krost, J. Bl�sing, Heteroepitaxy of ZnO on GaN templates Physica Status Solidi B-basic Solid State Physics. ,vol. 229, pp. 907- 910 ,(2002) , 10.1002/1521-3951(200201)229:2<907::AID-PSSB907>3.0.CO;2-7
Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. ,vol. 265, pp. 375- 381 ,(2004) , 10.1016/J.JCRYSGRO.2004.02.021
Jules D. Levine, A. Willis, W.R. Bottoms, Peter Mark, Correlation of electronic, leed, and auger diagnostics on ZnO surfaces Surface Science. ,vol. 29, pp. 144- 164 ,(1972) , 10.1016/0039-6028(72)90075-1
T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, H. Koinuma, Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy Applied Physics Letters. ,vol. 72, pp. 824- 826 ,(1998) , 10.1063/1.120905
T. Makino, T. Yasuda, Y. Segawa, A. Ohtomo, K. Tamura, M. Kawasaki, H. Koinuma, Strain effects on exciton resonance energies of ZnO epitaxial layers Applied Physics Letters. ,vol. 79, pp. 1282- 1284 ,(2001) , 10.1063/1.1398328
Bruno K Meyer, 1, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, J Christen, A Hoffmann, M Straßburg, M Dworzak, U Haboeck, AV Rodina, Bound exciton and donor–acceptor pair recombinations in ZnO Physica Status Solidi B-basic Solid State Physics. ,vol. 241, pp. 231- 260 ,(2004) , 10.1002/PSSB.200301962