Metalorganic chemical vapor phase deposition of ZnO with different O-precursors
作者： N. Oleynik , M. Adam , A. Krtschil , J. Bläsing , A. Dadgar
DOI: 10.1016/S0022-0248(02)01879-1
关键词:
摘要: ZnO is a promising material for light emitters in the UV region. For MOCVD growth no well-suited O-precursor available. Three different high-purity oxygen precursors, i.e. iso-propanol, acetone, and N 2 O were tested of on GaN/Si(1 1 1) templates. iso-propanol pre-reactions are observed influencing rate limiting temperature to below 500°. Best layer quality obtained around 450°C at 300 mbar reactor pressure VI-II ratio larger than 40. grown similar regime but using acetone as exhibits surface constructed from nanometer sized filaments. Most acetone-grown films have orientations (1011). Using higher temperatures needed due poor decomposition this gas. However, prereactions (0002) oriented layers with good X-ray ω-scans ZnO-positions can be 800°C above 600.
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