Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and RF Magnetron Sputtering

摘要: Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. In this paper, aluminum-doped zinc been prepared on glass substrates using a sol-gel route the radio-frequency magnetron sputtering process. stoichiometry could easily controlling nanosized precursor concentration thickness dip-coating cycles. On other hand, mixed N2O/Ar plasma gas provided N for RF results showed low resistivity 21.5 Ω cm with carrier −3.21× 10 cm−3 n-type aluminium-doped film. They were 34.2 +9.68 × p-type transmittance has as high 85–90% in 400–900 nm wavelength range. (2 at.% Al) exhibited hexagonal wurzite structure (002) preferred crystal orientation. depicted gradual increase NO that occupy oxygen vacancies.