Effects of growth ambient on electrical properties of Al–N co-doped p-type ZnO films
作者： F. Zhuge , L.P. Zhu , Z.Z. Ye , J.G. Lu , B.H. Zhao
DOI: 10.1016/J.TSF.2004.09.031
关键词: Thin film 、 Analytical chemistry 、 Hall effect 、 Electron mobility 、 Doping 、 Sputtering 、 Partial pressure 、 Electrical resistivity and conductivity 、 Chemistry 、 Cavity magnetron
摘要: Abstract p-Type zinc oxide thin films with c -axis orientation were prepared in N 2 O–O atmosphere by an Al–N co-doping method using reactive magnetron sputtering. Secondary ion mass spectroscopy (SIMS) measurements indicate that as-grown ZnO co-doped Al and N. Hall effect show a dependence of types conduction, carrier concentration mobility on O partial pressure ratios. deposited ratio 10% the highest hole 1.1×10 17 cm −3 , lowest resistivity about 100 Ω cm, low 0.3 V −1 s .
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