作者: Fei Zhuge , Shanshan Peng , Congli He , Xiaojian Zhu , Xinxin Chen
DOI: 10.1088/0957-4484/22/27/275204
关键词: Materials science 、 Dopant 、 Resistive switching 、 Dispersion (chemistry) 、 Nanotechnology 、 Conductivity 、 Grain boundary 、 Solubility 、 Doping 、 Composite material 、 Grain size
摘要: We report an improvement in minimizing the dispersion of resistive switching (RS) parameters such as ON/OFF state resistances and switching voltages of Cu/ZnO/Pt structures in which …