Characterization of n-type ZnO:Al films grown by magnetron sputtering
作者： F. Chaabouni , Luís Cadillon Costa , Mohamed Abaab , Jorge Monteiro
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.514-516.1358
关键词: Sputter deposition 、 Solar cell 、 Electronic engineering 、 Band gap 、 Dielectric spectroscopy 、 Thin film 、 Sputtering 、 Doping 、 Wide-bandgap semiconductor 、 Materials science 、 Optoelectronics
摘要: ZnO is a wide band gap semi-conductor that has attracted tremendous interest for its potential applications in optoelectronic, solar cell, gas detection … In this work, aluminium doped zinc oxide (ZnO:Al) films were deposited by RF magnetron sputtering on glass substrates with different power densities of 1.2, 2.5, 3.7 and 4.9 W/cm2. We notice the grown at 1.2 W/cm2 very thin their physical properties not precisely determined. The electrical investigated using impedance spectroscopy technique frequency range from 5 Hz to 13 MHz. data, represented Nyquist diagrams showed resistivity changed during first three months after deposition. show good optical transmittance (over 80 %) visible near infrared spectra. around 3 eV decreases increasing density (from 3.35 3.05 eV). results study suggest variation used deposition allow control
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