作者: Chen Shaoqiang , Zhang Jian , Feng Xiao , Wang Xiaohua , Luo laiqiang
DOI: 10.1016/J.APSUSC.2004.07.040
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摘要: Abstract In this study, nanocrystalline ZnO thin films deposited onto silicon substrates by sol–gel technique were studied. The starting material for was Zinc acetate. Single crystalline wafers with different orientations and the porous used as substrates. XRD employed to investigate evolution of orientation during thermal treatment, SEM observe surface morphology films. effects anneal temperature substrate doping type on studied in detail. results indicated that highly oriented could be generated Si controlling process conditions. It found types had less influence obtained compared temperatures. Thin introduced is beneficial enhance bonding strength between These are helpful deposit orientation-controlled kinds research application.