作者: Kevin Alvin Eswar , Azlinda Ab Aziz , Mohamad Rusop Mahmood , Saifollah Abdullah
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.667.265
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摘要: Nanostructured ZnO as a seeded was prepared by sol-gel technique on p-type silicon in various low molarities. Zinc acetate, Diethanolamine (DEA), and isopropyl were use starting material, stabilizer, solvent respectively. Atomic Force Microscopy (AFM) analysis shows smooth surface uniform layer produced molarities of precursor. The morphology nanostructured analyzed Field Emission Scanning Electron Microscopic (FESEM). It is found that the successfully deposited substrate with size ~10 nm to ~35 nm. Photoluminescence spectroscopy employed study band gap room temperature. very intensity PL 0.05m 0.1 m. become more obvious from 0.15 m precursor concentration.