Method for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rate
作者： Robert Dawson , Kenneth J. Ponder
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摘要: A method is provided for forming a planarization structure of dielectrical materials upon substrate topography. The dielectric are deposited as first and second insulating layers. second, then the layers partially removed by chemical-mechanical polish (CMP). Prior to CMP, layer variable chemical mechanical properties can be fixed at preferred or characteristic which makes it more less susceptible subsequent CMP. Accordingly, present invention utilizes adjustable necessary adequately planarize during application
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