STM and SEM studies on the character of triangular Si(111)-7 × 7 domains formed in quenched Si(111) surface☆

摘要: Abstract STM and SEM observations have been made on the 7 × ordering process of quenched Si(111)-1 1 surface metastable atom complexes. All triangular domains nucleated in region found to character 〈112〉. The rate-controlling for growth is nucleation a faulted half cell at outermost edge domain. Corner holes, instead dimer rows play critical role cell. contrast filled state images examined complexes; it dark centered adatoms 9 11 11, all 2 2, c(2 4) defected unfaulted type which was first time present work. In with these complexes, √3 structure appear bright. These features are interpreted terms charge transfer (between rest atoms) mechanism. Extreme stability has noted defect (with side ) Si(111) attributed domain boundaries running from apices defect. analysed quantitatively energy versus curve derived this paper.