Electronic structure of gated graphene and graphene ribbons
作者： J. Fernández-Rossier , J. J. Palacios , L. Brey
DOI: 10.1103/PHYSREVB.75.205441
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摘要: We study the electronic structure of gated graphene sheets. consider both infinite and finite width ribbons. The effect Coulomb interactions between electrically injected carriers coupling to external gate are computed self-consistently in Hartree approximation. compute average density extra n2D, number occupied subbands, profiles as a function potential Vg. discuss quantum corrections classical capacitance we calculate threshold Vg above which semiconducting armchair ribbons conduct. find that ideal conductance perfectly transmitting wide is proportional square root voltage.
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