Luminescence properties of β-FeSi2 and its application to photonics
作者： Yoshihito Maeda
DOI: 10.1016/J.APSUSC.2008.02.127
关键词:
摘要: We have investigated the photoluminescence properties of β-FeSi 2 and subsequently reported many studies on enhancement luminescence efficiency. further discussed a limit for efficiency based weak confinement theory excitons in nanocrystals. Moreover, we an application with high refractive index to photonic crystals.
harvard.edu
elsevier.com
sci-hub.se 参考文章(35)
Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura, 1.54μm photoluminescence from β-FeSi2 as-deposited film Applied Physics Letters. ,vol. 91, pp. 071903- ,(2007) , 10.1063/1.2770654
A. G. Birdwell, T. J. Shaffner, D. Chandler-Horowitz, G. H. Buh, M. Rebien, W. Henrion, P. Stauß, G. Behr, L. Malikova, F. H. Pollak, C. L. Littler, R. Glosser, S. Collins, Excitonic transitions in β-FeSi2 epitaxial films and single crystals Journal of Applied Physics. ,vol. 95, pp. 2441- 2447 ,(2004) , 10.1063/1.1643778
M. Suezawa, Y. Sasaki, K. Sumino, Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals Physica Status Solidi (a). ,vol. 79, pp. 173- 181 ,(1983) , 10.1002/PSSA.2210790119
Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura, Noriyuki Kuwano, Photoluminescence properties of ion beam synthesized β-FeSi2 Thin Solid Films. ,vol. 461, pp. 160- 164 ,(2004) , 10.1016/J.TSF.2004.02.057
Shucheng Chu, Toru Hirohada, Hirofumi Kan, Room Temperature 1.58 µm Photoluminescence and Electric Properties of Highly Oriented β-FeSi2 Films Prepared by Magnetron-Sputtering Deposition Japanese Journal of Applied Physics. ,vol. 41, pp. 299- ,(2002) , 10.1143/JJAP.41.L299
Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura, Epitaxial Growth of Al-Doped β-FeSi2 on Si by Ion Beam Synthesis Japanese Journal of Applied Physics. ,vol. 44, pp. 2502- 2505 ,(2005) , 10.1143/JJAP.44.2502
Yoshikazu Terai, Yoshihito Maeda, Yasufumi Fujiwara, Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements Thin Solid Films. ,vol. 515, pp. 8129- 8132 ,(2007) , 10.1016/J.TSF.2007.02.058
J. Derrien, J. Chevrier, V. Le Thanh, J.E. Mahan, Semiconducting silicide-silicon heterostructures : growth, properties and applications Applied Surface Science. pp. 382- 393 ,(1992) , 10.1016/0169-4332(92)90259-Z
Ken-ichiro Takakura, Noriyoshi Hiroi, Takashi Suemasu, Shigefusa F. Chichibu, Fumio Hasegawa, Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy Applied Physics Letters. ,vol. 80, pp. 556- 558 ,(2002) , 10.1063/1.1432755
Y. Gao, S. P. Wong, W. Y. Cheung, G. Shao, K. P. Homewood, Effect of implantation temperature on dislocation loop formation and origin of 1.55-μm photoluminescence from ion-beam-synthesized FeSi2 precipitates in silicon Applied Physics Letters. ,vol. 83, pp. 42- 44 ,(2003) , 10.1063/1.1590434