作者: Q. Xu , H.L. Heinisch , T. Yoshiie
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摘要: The dependence of defect cluster formation on dose rate is an important factor in understanding the mechanisms microstructure evolution under irradiation. In present study, effects vacancy clusters and self-interstitial atom (SIA) during low irradiation up to 0.01 dpa were investigated. densities SIA formed at 200 K 458 found be independent rate. Vacancy dependent temperatures between K. results can explained by migration thermal stability defects, which are determined temperature.