Sputtering yields of Si, SiC, and B4C under nanodroplet bombardment at normal incidence

摘要: Single-crystal silicon and polycrystalline carbide boron were bombarded with a beam of electrosprayed nanodroplets at normal incidence. The acceleration voltage the ranged between 9.13 20.13 kV. kinetic energy nanodroplet molecules varied 24.1 91.2 eV. volume sputtered material was measured profilometer, molecular flux beamlet time flight spectrometer. Sputtering yields as high 2.32, 1.48, 2.29 atoms per molecule obtained for Si, SiC, B4C. maximum receding rates substrates’ surfaces 448, 172, 170 nm/min respectively. significant increase respect to sputtering broad-beam atomic ion sources is due large electrosprays.