Tunable fabrication and photoluminescence property of SiC nanowires with different microstructures

摘要: Abstract SiC nanowires including ultra-thin, hierarchical, bamboo-like, beaded-like and core-shell were successfully synthesized via carbothermal reduction method without using catalyst. The microstructures diameter controlled by reaction temperature ranging from 1500 to 1600 °C, holding time 2 4 h different raw materials. Notably, the of ultra-thin was 8 20 nm. Photoluminescence properties obtained with unique investigated at room temperature. It indicates that primary emission peaks locate in blue/violet band range 350∼500 nm obvious blue shifts. Meanwhile, luminescence mechanism is discussed detail. exhibit highest intensity because strong quantum confinement effect quasi-direct gap. Due defects twin segments, hierarchical bamboo-like high stacking faults rough surface show higher under 263 excitation. While SiO2 shell smooth a noticeable increase 318 This might be ascribed neutral oxygen vacancies atoms.