Hole effective mass in strained Si1−xCx alloys
作者： C. Y. Lin , S. T. Chang , C. W. Liu
DOI: 10.1063/1.1796516
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摘要: The directional, density-of-states, and carrier-concentration effective masses of light, heavy, split-off holes have been calculated for strained Si1−xCx alloys on Si (001) substrate. results the directional mass show that effect strain makes constant energy surface light near band edge more symmetric than in pure silicon. heavy hole bands is rather regular; up to 7% carbon concentration monotonically reduces density-of-states two at values within interval 0.4eV below valence edge. This reduction obtained temperatures from 0to600K. less trivial; nonzero concentrations influences a similar way as it does but irregu...
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Donald A. Neamen, Semiconductor physics and devices basic principles ,(1991)
S. T. Chang, C. Y. Lin, C. W. Liu, Energy band structure of strained Si1−xCx alloys on Si (001) substrate Journal of Applied Physics. ,vol. 92, pp. 3717- 3723 ,(2002) , 10.1063/1.1502203
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel, Photoluminescence in short-period Si/Ge strained-layer superlattices. Physical Review Letters. ,vol. 64, pp. 1055- 1058 ,(1990) , 10.1103/PHYSREVLETT.64.1055
M. V. Fischetti, S. E. Laux, Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Journal of Applied Physics. ,vol. 80, pp. 2234- 2252 ,(1996) , 10.1063/1.363052
S.K. Chun, K.L. Wang, Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on IEEE Transactions on Electron Devices. ,vol. 39, pp. 2153- 2164 ,(1992) , 10.1109/16.155887
Frank L. Madarasz, Joseph E. Lang, Patrick M. Hemeger, Effective masses for nonparabolic bands in p‐type silicon Journal of Applied Physics. ,vol. 52, pp. 4646- 4648 ,(1981) , 10.1063/1.329345
P. Boucaud, C. Francis, F. H. Julien, J.‐M. Lourtioz, D. Bouchier, S. Bodnar, B. Lambert, J. L. Regolini, Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys Applied Physics Letters. ,vol. 64, pp. 875- 877 ,(1994) , 10.1063/1.110981
K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang, F. K. LeGoues, Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system Applied Physics Letters. ,vol. 60, pp. 3033- 3035 ,(1992) , 10.1063/1.106774
K Eberl, SS Iyer, JC Tsang, MS Goorsky, FK Legoues, The growth and characterization of Si1−yCy alloys on Si(001) substrate Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 10, pp. 934- 936 ,(1992) , 10.1116/1.586092
K. Eberl, K. Brunner, W. Winter, Pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on Si Thin Solid Films. ,vol. 294, pp. 98- 104 ,(1997) , 10.1016/S0040-6090(96)09269-3