Low outgassing photoresist compositions
作者： Richard Anthony Dipietro , Ratnam Sooriyakumaran , Sally Ann Swanson , Hoa Truong
DOI:
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摘要: Polymers for use in photoresist compositions include a repeat unit having formula of: wherein Z represents of polymer backbone; X is linking group selected from the consisting alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, R hydrogen, alkyl, aryl, cycloalkyl groups with proviso that are not part same ring system. Also disclosed processes patterning relief image composition, wherein composition has an outgassing rate less than 6.5E+14 molecules/cm 2 /s.
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