Reactive Processes of Nickel Oxide on Oxidic Substrates as Observed by Scanning Force Microscopy
作者： M. Zöllner , S. Kipp , K.D. Becker
DOI: 10.1002/1521-4079(200003)35:3<299::AID-CRAT299>3.0.CO;2-I
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摘要: High-temperature diffusion/reaction processes of nickel oxide (NiO) have been studied on oxidic surfaces. Nickel was sputtered silicon dioxide (SiO2, quartz) and yttrium stabilized zircon (YSZ). The metallic films with layer-thicknesses 200 - 800 nm possessing well-defined steps shapes, subsequently were annealed in air. On quartz, the thermal anneal at 500°C led to formation olivine. Thermal YSZ NiO. Further treatment 1200°C caused development a sigmoid profile former step NiO film. evolution topological changes annealing time is not completely understood, but surface diffusion must play an essential role.
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