Method of making bipolar and MOS devices on same integrated circuit substrate
作者： Mammen Thomas , Matthew Weinberg
DOI:
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摘要: An improved integrated circuit structure is disclosed comprising bipolar and MOS devices formed on the same substrate. The have at least emitter collector contact portions from a polysilicon layer which results in raised contacts. are similarly with gate layer. Metal silicide over portion of base, source, drain regions to provide conductive paths In one embodiment, contacts also permit formation highly planarized self-aligned by planarizing an insulating sifficiently expose upper surface
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