Diode and its manufacturing method

摘要: PROBLEM TO BE SOLVED: To provide a PN junction diode in which surge current can be uniformly supplied and has high resistance, to method for manufacturing the same. SOLUTION: The comprises first concentration diffused region, reverse conductivity type second regions region disposed at both sides with between, made of semiconductors formed between region. structure widths are equally melting point insulation protective film protecting is adjacent shortest part junction. Further, by ion-implanting used as mask. COPYRIGHT: (C)2003,JPO