作者: Hayakawa Masahiko , Fukuoka Osamu , Shishido Hideaki
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摘要: PROBLEM TO BE SOLVED: To enhance resistivity against an overvoltage without increasing area. SOLUTION: A semiconductor device includes a first region 103 formed on terminal 100 and having n-type impurity 106, resistor 107 in the inner periphery of 106 plan view, p-type 108 view. Further, second 104 101 109, 110 109 111 110. COPYRIGHT: (C)2010,JPO&INPIT