Semiconductor structure having a source and a drain with reverse facets
作者： Ali Khakifirooz , Kangguo Cheng , Thomas N. Adam , Jinghong Li , Alexander Reznicek
DOI:
关键词:
摘要: A semiconductor structure including a wafer. The wafer includes gate structure, first trench in the adjacent to side of and second trenches filled with doped epitaxial silicon form source drain such that each are recessed have an inverted facet. In preferred exemplary embodiment, is boron.
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