MBE growth of nitride semiconductor lasers
作者： Matthias Kauer , Valerie Bousquet , Stewart Edward Hooper , Jonathan Heffernan , Katherine L Johnson
DOI:
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摘要: A method of fabricating a semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, sequence, first cladding region (4), optical guiding (5), an active (6), second (7) and (8). Each (8) is deposited by molecular beam epitaxy. The nitrogen content layers improved locating ammonia source close proximity to substrate (figure 5).
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