GaN laser diode and method of driving a laser diode
作者： Takao Miyajima , Hideki Watanabe , Ikeda Masao , Hiroyuki Yokoyama , Shunsuke Kono
DOI:
关键词:
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided including GaN-based laminate body comprising: first compound semiconductor layer (30), second (50) comprising p-type (53, 54, 55), wherein part of the (54, 55) removed to form ridge section (56), an active (40) having quantum well being arranged between (30) (50), electrode (61) electrically connected (62) distance from 1.2x10- 7 m or less, 1 µm width (56) 2 less. In method driving diode, driven by pulse current which 10 more times higher than threshold value. The preferably nanoseconds value specifically 0.4 amperes over.
lens.org 参考文章(9)
Takashi Kano, Yasuhiko Nomura, Nitride-based semiconductor laser device ,(2003)
Peter Vasil’ev, Ultrafast Diode Lasers Optical Engineering. ,vol. 35, pp. 2439- 2439 ,(1996) , 10.1117/1.600817
Chiaki Sasaoka, Kazuhisa Fukuda, Akitaka Kimura, Group III Nitride Semiconductor Optical Device Group III Nitride Semiconductor Optical Device ,(2005)
Shigetoshi Ito, Yukio Yamasaki, Nitride semiconductor laser device and semiconductor optical device ,(2002)
Katsumi Sugiura, Group iii nitride semiconductor light-emitting device ,(2006)
Chiaki Sasaoka, Kazuhisa Fukuda, Akitaka Kimura, Group iii nitride semiconductor optical device ,(2005)
Matthias Kauer, Valerie Bousquet, Stewart Edward Hooper, Jonathan Heffernan, Katherine L Johnson, MBE growth of nitride semiconductor lasers ,(2003)
Morita Hitoshi, WASHING/DRYING MACHINE ,(2005)
Keiichi Yodoshi, Daijiro Inoue, Yasuhiko Nomura, Nobuhiko Hayashi, Masayuki Hata, Takashi Kano, Tsutomu Yamaguchi, Tadao Toda, Masayuki Shouno, Yuuji Hishida, Nitride semiconductor laser element ,(2003)