Group iii nitride semiconductor optical device
作者： Chiaki Sasaoka , Kazuhisa Fukuda , Akitaka Kimura
DOI:
关键词:
摘要: A semiconductor laser excelling in current injection efficiency. There is provided an inner stripe type comprising p-type cladding layer (309) having a superlattice structure composed of, alternately superimposed on each other, GaN layers and Al0.1Ga0.9N layers. The has portion of high dislocation density low density. That is, the relatively region right above constriction (308), while opening (308).
lens.org 参考文章(39)
Masaaki Onomura, Peter J. Parbrook, Masayuki Ishikawa, Shinji Saito, Yukie Nishikawa, Genichi Hatakoshi, Compound semiconductor devices and methods of making compound semiconductor devices ,(1995)
Yasutoshi Kawaguchi, Akihiko Ishibashi, Ayumu Tsujimura, Nobuyuki Otsuka, Nitride semiconductor, method for manufacturing the same and nitride semiconductor device ,(2003)
Hwa-Mok Kim, Tae-Won Kang, Kwan-Soo Chung, Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same ,(2004)
Shin-ya Nunoue, Masayuki Ishikawa, Semiconductor device, semiconductor laser, their manufacturing methods and etching methods ,(2001)
Naoto Jikutani, Shunichi Sato, Takashi Takahashi, Laser diode and semiconductor light-emitting device producing visible-wavelength radiation ,(2003)
Michael S. Shur, Remigijus Gaska, Light emitting heterostructure ,(2003)
Yukio Shakuda, Haruo Tanaka, Gallium nitride type laser for emitting blue light ,(1999)
Masayuki Ishikawa, Masahiro Yamamoto, John Rennie, Hidetoshi Fujimoto, Shinji Saito, Yukie Nishikawa, Yoshihiro Kokubun, Semiconductor optoelectric device and method of manufacturing the same ,(1996)
Yukio Shakuda, Semiconductor light emitting device and manufacturing method therefor ,(2009)
Osamu Imafuji, Kenji Orita, Masaaki Yuri, Masahiro Ishida, Shinji Nakamura, Semiconductor Device and Semiconductor Substrate, and Method of Fabricating the Same ,(1999)