Semiconductor optoelectric device and method of manufacturing the same
作者： Masayuki Ishikawa , Masahiro Yamamoto , John Rennie , Hidetoshi Fujimoto , Shinji Saito
DOI:
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摘要: The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and method of manufacturing the same. 18 according constructed by depositing compound-semiconductor layers 13 14 on monocrystalline substrate 11 hexagonal close-packed structure. shape parallelogram. Individual sides parallelogram are parallel orientation. As substrate, sapphire, zinc oxide or silicon carbide may be used. layers, an n-type GaN layer p-type
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