Group III Nitride Semiconductor Optical Device Group III Nitride Semiconductor Optical Device
作者： Chiaki Sasaoka , Kazuhisa Fukuda , Akitaka Kimura
DOI:
关键词: Cladding (fiber optics) 、 Laser 、 Nitride semiconductors 、 Semiconductor 、 Optoelectronics 、 Superlattice 、 Materials science
摘要: The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type according to invention, p cladding layer 309 has superlattice structure composed of GaN layers and Al 0.1 Ga 0.9 N layers, which are alternately layered on each other. portion high dislocation density low density. That is, is relatively region directly above opening current-confining 308, whereas 308.
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