Light emitting element with multiple multi-layer reflectors and a barrier layers
作者： Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu , Tetsuroh Murakami
DOI:
关键词: Active layer 、 Optoelectronics 、 Semiconductor 、 Multi layer 、 Materials science 、 Standing wave 、 Impurity 、 Resonator 、 Quantum well 、 Layer (electronics)
摘要: In a semiconductor light-emitting element, first DBR and second DBR, with specified spacing left between them, form resonator, single quantum well active layer is positioned at the loop of standing wave within this resonator. The composed Ga0.5In0.5P pair (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches therebetween. impurity concentration layers higher than that layer. For example, set to 2×1016 cm−3, while 2×1018 cm−3.
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