Early stage formation of graphene on the C-face of 6H-SiC
作者： A. Tiberj , L. Magaud , N. Mestres , J. Camassel , J. R. Huntzinger
DOI: 10.1063/1.3056655
关键词:
摘要: An investigation of the early stage formation graphene on C-face 6H-SiC is presented. We show that sublimation few atomic layers Si out SiC substrate not homogeneous. In good agreement with results theoretical calculations it starts from defective sites, mainly dislocations define nearly circular flakes, which have a pyramidal, volcano-like, shape center chimney where original defect was located. At higher temperatures, complete conversion occurs but, again, Within sample surface intensity Raman G and 2D bands, evidences non-homogeneous thickness.
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