作者: K. Berthold , W. Beinstingl , E. Gornik
DOI: 10.1364/OL.12.000069
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摘要: The influence of dielectric coatings on the photoresponsivity metal–insulator–semiconductor structures holographic submicrometer sinusoidal grating is investigated. Narrow-band photodetectors are realized based excitation transverse electric modes and surface plasmon polaritons in vacuum–MgF2–Al or vacuum–SiO2–Al layer system Si substrates. These detectors sensitive to either s- p-polarized light. Quantum efficiencies up 20% a linewidth 18 mm were achieved with at wavelength λ = 325 nm. resonances tunable from ultraviolet into visible regime by variation film thickness.