作者: A. Köck , W. Beinstingl , K. Berthold , E. Gornik
DOI: 10.1063/1.99193
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摘要: We have investigated the light emission from forward‐ and reverse‐biased sinusoidally structured Ag/n‐GaAs Schottky diodes. Sinusoidally junctions show increased because of radiative decay excited surface plasmon polaritons, resulting in drastically enhanced quantum efficiency. A model explaining excitation polaritons is presented.