Surface plasmon polariton enhanced light emission from Schottky diodes

作者: A. Köck , W. Beinstingl , K. Berthold , E. Gornik

DOI: 10.1063/1.99193

关键词:

摘要: We have investigated the light emission from forward‐ and reverse‐biased sinusoidally structured Ag/n‐GaAs Schottky diodes. Sinusoidally junctions show increased because of radiative decay excited surface plasmon polaritons, resulting in drastically enhanced quantum efficiency. A model explaining excitation polaritons is presented.

参考文章(14)
K. Berthold, W. Beinstingl, E. Gornik, Frequency- and polarization-selective Schottky detectors in the visible and near ultraviolet. Optics Letters. ,vol. 12, pp. 69- 71 ,(1987) , 10.1364/OL.12.000069
J. R. Kirtley, T. N. Theis, J. C. Tsang, Diffraction‐grating‐enhanced light emission from tunnel junctions Applied Physics Letters. ,vol. 37, pp. 435- 437 ,(1980) , 10.1063/1.91729
N. B. Lukyanchikova, T. M. Pavelko, G. S. Pekar, Physical processes in forward-biased ZnS MIS light-emitting diodes with a „thick” interfacial layer Physica Status Solidi (a). ,vol. 66, pp. 749- 759 ,(1981) , 10.1002/PSSA.2210660241
J. R. Kirtley, T. N. Theis, J. C. Tsang, D. J. DiMaria, Hot-electron picture of light emission from tunnel junctions Physical Review B. ,vol. 27, pp. 4601- 4611 ,(1983) , 10.1103/PHYSREVB.27.4601
T. N. Theis, J. R. Kirtley, D. J. DiMaria, D. W. Dong, Light Emission from Electron-Injector Structures Physical Review Letters. ,vol. 50, pp. 750- 754 ,(1983) , 10.1103/PHYSREVLETT.50.750
H. Adachi, H. L. Hartnagel, GaAs Schottky light emitters for the study of surface avalanching and electroluminescence Journal of Vacuum Science and Technology. ,vol. 19, pp. 427- 430 ,(1981) , 10.1116/1.571032
N. Kroó, Zs. Szentirmay, J. Félszerfalvi, On the origin of light emission by tunnel junctions Physics Letters A. ,vol. 81, pp. 399- 401 ,(1981) , 10.1016/0375-9601(81)90101-8
John Lambe, S. L. McCarthy, Light Emission from Inelastic Electron Tunneling Physical Review Letters. ,vol. 37, pp. 923- 925 ,(1976) , 10.1103/PHYSREVLETT.37.923
B. Bayraktaroglu, H.L. Hartnagel, White-light emission from GaAs m.o.s. structures Electronics Letters. ,vol. 14, pp. 470- 472 ,(1978) , 10.1049/EL:19780316
N. B. Lukyanchlkova, T. M. Pavelko, G. S. Pekar, N. N. Tkachenko, M. K. Sheinkman, Mechanism of electroluminescence excitation in forward-biased MS and MIS light-emitting diodes based on wide-band-gap II–VI compounds Physica Status Solidi (a). ,vol. 64, pp. 697- 706 ,(1981) , 10.1002/PSSA.2210640235