Method of making a plurality of MOSFETs having different threshold voltages
作者： Vernon D. McKenny , Harold W. Dozier , Robert S. Green
DOI:
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摘要: An integrated circuit using MOSFETs having varying threshold voltages permitting improved performance and reduced area utilization on a monolithic semiconductor chip is produced by selectively ion implantation doses in the channels of MOSFETs. By repeated masking implanting steps, selected are implanted with differing ions combinations doses, thereby forming portions tailored to optimize different characteristics associated portions.
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