Electronic structure of the Cd vacancy in CdTe

作者: P. H. E. Meijer , P. Pecheur , G. Toussaint

DOI: 10.1002/PSSB.2221400117

关键词:

摘要: By means of a tight binding parametrization the band structure cadmium telluride, in conjunction with Green's function method density states perfect crystal is determined. Various parametrizations for this compound are compared. Next, energy levels Cd vacancy calculated taking into account change wave functions around missing atom as well various possibilities charged state at site. Spin–orbit coupling not taken account, nor possible neighbor relaxation vacancy. In Verbindung mit der Methode Greenschen Funktionen wird mittels „tight-binding” Parametrisierung Bandstruktur von Kadmiumtellurid die Zustandsdichte des perfekten Kristalls bestimmt. Verschiedene Parametrisierungen fur diese werden verglichen. Uter Berucksichtigung sowohl Anderung Wellenfunktion um das fehlende Atom als auch verschiedenen Moglichkeiten den Ladungszustand an diesem Platz dann Energieniveaus Cd-Leerstelle berechnet. Weder Spin–Bahnkopplung noch eine mogliche Nachbar-relaxation Leerstelle berucksichtigt.

参考文章(19)
D.W. Bullett, The Renaissance and Quantitative Development of the Tight-Binding Method Solid State Physics. ,vol. 35, pp. 129- 214 ,(1980) , 10.1016/S0081-1947(08)60504-4
G. Grosso, G. Pastori Parravicini, Memory Function Methods in Solid State Physics Advances in Chemical Physics. ,vol. 62, pp. 133- 181 ,(2007) , 10.1002/9780470142868.CH4
A. Goltzene, C. Schwab, E. P. R. characterization of p-type as grown and Cl-compensated THM grown CdTe Revue de Physique Appliquée. ,vol. 12, pp. 199- 201 ,(1977) , 10.1051/RPHYSAP:01977001202019900
Matthias Scheffler, Jean Pol Vigneron, Giovanni B. Bachelet, Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B. ,vol. 31, pp. 6541- 6551 ,(1985) , 10.1103/PHYSREVB.31.6541
P. Pecheur, J. van der Rest, G. Toussaint, Tight-binding study of the metal vacancy in zinc selenide Journal of Crystal Growth. ,vol. 72, pp. 147- 150 ,(1985) , 10.1016/0022-0248(85)90133-2
J Van der Rest, P Pecheurs, Electronic structure of the ideal vacancies in Ge, GaAs and ZnSe crystals Journal of Physics C: Solid State Physics. ,vol. 17, pp. 85- 95 ,(1984) , 10.1088/0022-3719/17/1/015
G. A. Baraff, E. O. Kane, M. Schlüter, Theory of the silicon vacancy: An Anderson negative-U system Physical Review B. ,vol. 21, pp. 5662- 5686 ,(1980) , 10.1103/PHYSREVB.21.5662
C. A. Swarts, M. S. Daw, T. C. McGill, Bulk vacancies in CdxHg1−xTe Journal of Vacuum Science and Technology. ,vol. 21, pp. 198- 200 ,(1982) , 10.1116/1.571712